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IRFH7923PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V GS = 0V, I D = 250μA
?Β V DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.024
–––
V/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
6.8
9.3
8.7
11.9
m ?
V GS = 10V, I D = 15A
V GS = 4.5V, I D = 12A
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.8
-5.8
2.35 V
––– mV/°C
V DS = V GS , I D = 25μA
I DSS
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
R G
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.7
1.8
1.1
2.7
3.1
3.8
4.9
2.0
7.1
8.7
8.6
4.9
1095
235
110
1.0
150
100
-100
–––
13
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
μA
nA
S
nC
nC
?
ns
pF
V DS = 24V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
V GS = 20V
V GS = -20V
V DS = 15V, I D = 12A
V DS = 15V
V GS = 4.5V
I D = 12A
See Fig.17 & 18
V DS = 16V, V GS = 0V
V DD = 15V, V GS = 4.5V
I D = 12A
R G =1.8 ?
See Fig.15
V GS = 0V
V DS = 15V
? = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
27
12
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
integral reverse
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
12
11
3.9
120
1.0
18
17
A
V
ns
nC
MOSFET symbol
showing the
G
p-n junction diode.
T J = 25°C, I S = 12A, V GS = 0V
T J = 25°C, I F = 12A, V DD = 15V
di/dt = 300A/μs
D
S
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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